Toshiba Releases 650V 3rd Generation SiC MOSFETs in TOLL Package
Toshiba Electronic Devices & Storage Corporation
("Toshiba") has launched three 650V silicon carbide (SiC) MOSFETs
equipped with its latest 3rd generation SiC MOSFET chips and housed in
surface-mount TOLL packages. The new devices are suitable for industrial
equipment, such as switched-mode power supplies and power conditioners for
photovoltaic generators. Volume shipments of the MOSFETs, “TW027U65C,”
“TW048U65C,” and “TW083U65C,” start today.
The new products are Toshiba’s 3rd generation SiC MOSFETs in a
general-purpose surface-mount TOLL package, which reduces device volume by more
than 80% compared to through-hole packages such as TO-247 and TO-247-4L(X), and
improves equipment power density.
The TOLL package also offers lower parasitic impedance than through-hole
packages, which helps to reduce switching losses. As a 4-terminal package, a
Kelvin connection can be used as the signal source terminal for the gate drive.
This reduces the influence of inductance in the source wire within the package,
achieving high-speed switching performance; in the case of TW048U65C, turn-on
loss and turn-off loss are approximately 55% and 25% lower, respectively,
than in current Toshiba products[5], which will contribute to lower equipment
power loss.
Toshiba will continue to expand its lineup to contribute to improved
equipment efficiency and increased power capacity.
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